IXZ316N60 z-mos rf po wer mosfet v dss = 600 v i d25 = 18.0 a r ds(on) = 0.44 ? p dc = 880 w symbol test conditions maximum rat- ings v dss t j = 25c to 150c 600 v v dgr t j = 25c to 150c; r gs = 1 m ? 600 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25c 18 a i dm t c = 25c, pulse width limited by t jm 90 a i ar t c = 25c 18 a e ar t c = 25c tbd mj dv/dt i s i dm , di/dt ? 100a/ s, v dd v dss , t j 150c, r g = 0.2 ? 5 v/ns i s = 0 >200 v/ns p dc 880 w p dhs t c = 25c, derate 4.4w/c above 25c 440 w p damb t c = 25c 3.0 w r thjc 0.17 c/w r thjhs 0.34 c/w symbol test conditions characteristic values ( t j = 25c unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 4 ma 600 v v gs(th) v ds = v gs , i d = 250 ? 3.5 4.25 6.5 v i gss v gs = 20 v dc , v ds = 0 100 na r ds(on) v gs = 20 v, i d = 0.5i d25 pulse test, t 300 s, duty cycle d 2% 0.437 ? g fs v ds = 50v, i d = 0.5i d25 , pulse test 15.2 s t j -55 +175 c t jm 175 c t stg -55 + 175 c t l 1.6mm(0.063 in) from case for 10 s 300 c weight 3.5 g i dss v ds = 0.8v dss t j = 25c v gs =0 t j =125c 50 1 a ma features ? isolated substrate ? high isolation voltage (>2500v) ? excellent thermal transfer ? increased temperature and power cycling capability ? ixys advanced z-mos process ? low gate charge and capacitances ? easier to drive ? faster switching ? low r ds(on) ? very low insertion inductance (<2nh) ? no beryllium oxide (beo) or other hazardous materials advantages ? optimized for rf and high speed ? easy to mount?no insulators needed ? high power density drain sg1 sg2 gate sd1 sd2 n-channel enhancement mode sw itch mode rf mosfet low capacitance z-mos tm mosfet process optimized for rf operation ideal for class c, d, & e applications
IXZ316N60 z-mos rf po wer mosfet symbol test conditions characteristic values ( t j = 25c unless otherwise specified) min. typ. max. r g 1 ? c iss 1930 pf c oss v gs = 0 v, v ds = 0.8 v dss(max) , f = 1 mhz 125 pf c rss 17.8 pf c stray back metal to any pin 33 pf t d(on) 4 ns t on v gs = 15 v, v ds = 0.8 v dss i d = 0.5 i dm r g = 1 ? (external) 4 ns t d(off) 4 ns t off 6 ns characteristic values ( t j = 25c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 18 i sm repetitive; pulse width limited by t jm 108 a v sd i f = i s, v gs =0 v, pulse test, t 300s, duty cycle 2% 1.5 v t rr tbd ns source-drain diode ixys rf reserves the right to change limits, test conditions and dimensions. ixys rf mosfets are covered by one or more of the following u.s. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002
IXZ316N60 z-mos rf po wer mosfet IXZ316N60 capacitances verses vds crss coss ciss doc #dsIXZ316N60 rev 06/04 ? 2004 ixys rf an ixys company 2401 research blvd., suite 108 fort collins, co usa 80526 970-493-1901 fax: 970-493-1903 email: info@ixysrf.com web: http://www.ixysrf.com 1 10 10 0 1000 10000 0 100 200 300 400 500 600 vds in volts capacitiance in pf
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